Theoretical models for work function control (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1733-1736

  Shiraishi, Kenji ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

High k oxides; Oxygen vacancies; Thermodynamics; Work functions

Indexed keywords

ANNIHILATION REACTIONS; BAND EDGE; EQUIVALENT OXIDE THICKNESS; FERMI LEVEL PINNING; FUNCTION CONTROL; HIGH-K GATE STACKS; HIGH-K OXIDES; INTERFACE LAYER; SI SUBSTRATES; THEORETICAL MODELS; THERMAL EQUILIBRIUMS; VACANCY MODELS;

HAFNIUM; OXYGEN; SILICON COMPOUNDS; THERMODYNAMICS; VACANCIES; WORK FUNCTION;

OXYGEN VACANCIES;

EID: 67349136023     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.115     Document Type: Article

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