Fluorescent microscopy proving resin adhesion to a fluorinated mold surface suppressed by pentafluoropropane in step-and-repeat ultraviolet nanoimprinting

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 2, 2011, Pages

  Kobayashi, Kei ^a,b   Kubo, Shoichi ^a,b   Hiroshima, Hiroshi ^b,c   Matsui, Shinji ^b,d   Nakagawa, Masaru ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACRYLATE RADICALS; AIR ATMOSPHERE; AIR BUBBLES; CHEMICAL VAPOR; FLUORESCENCE INTENSITIES; FLUORESCENT DYES; FLUORESCENT MICROSCOPY; HIGH-SENSITIVITY; MOLD SURFACES; NANO-IMPRINTING; NUMBER OF CYCLES; PENTAFLUOROPROPANE; RESIN ADSORPTION; RESIN COMPONENTS; STEP-AND-REPEAT; ULTRAVIOLET NANO-IMPRINTING; UNCURED RESINS; UV CURABLE; UV-CURABLE RESINS; UV-VISIBLE ABSORPTION SPECTROSCOPY;

ABSORPTION SPECTROSCOPY; ADSORPTION; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHEMICAL MODIFICATION; CURING; FLUORESCENCE; MOLDS; PHOTOPOLYMERIZATION; SILICA;

RESINS;

EID: 79959432874     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.06GK02     Document Type: Article

References (30)

1. K. Selinidis, E. Thompson, G. Schmid, N. Stacey, J. Perez, J. Maltabes, D. J. Resnick, J. Yeo, H. Kim, and B. Eynon: Proc. SPIE 7028 (2008) 70280R.
2. Z. Ye, R. Ramos, C. B. Brooks, P. Hellebrekers, S. Carden, and D. La Brake: Proc. SPIE 7637 (2010) 76371A.
3. G. M. Schmid, C. Brooks, Z. Ye, S. Johnson, D. La Brake, S. V. Sreenivasan, and D. J. Resnick: Proc. SPIE 7488 (2009) 748820.
4. J. Wang, X. Sun, L. Chen, and S. Y. Chou: Appl. Phys. Lett. 75 (1999) 2767.
5. W. Zhou, G. Min, Z. Song, J. Zhang, Y. Liu, and J. Zhang: Nanotechnology 21 (2010) 205304.
6. C.-J. Ting, F.-Y. Chang, C.-F. Chen, and C. P. Chou: J. Micromech. Microeng. 18 (2008) 075001.
7. Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott: Appl. Phys. Lett. 94 (2009) 263118.
8. K. Ishihara, M. Fujita, I. Matsubara, T. Asano, and S. Noda: Jpn. J. Appl. Phys. 45 (2006) L210.
9. K. Ishihara, M. Fujita, I. Matsubara, T. Asano, S. Noda, H. Ohata, A. Hirasawa, H. Nakada, and N. Shimoji: Appl. Phys. Lett. 90 (2007) 111114.
10. C. Akbayir, F. Bulut, T. Farrell, A. Goldschmidt, R. Güntner, A. P. Kam, P. Miclea, U. Scherf, J. Seekamp, V. G. Solovyev, and C. M. S. Torres: Rev. Adv. Mater. Sci. 5 (2003) 205.
11. M. Aryal, K. Trivedi, and W. Hu: ACS Nano 3 (2009) 3085.
12. H. Hiroshima and M. Komuro: Jpn. J. Appl. Phys. 46 (2007) 6391.
13. H. Hiroshima: Microelectron. Eng. 86 (2009) 611.
14. D. Truffier-Boutry, M. Zelsmann, J. De Girolamo, J. Boussey, C. Lombard, and B. Pepin-Donat: Appl. Phys. Lett. 94 (2009) 044110.
15. D. Truffier-Boutry, A. Beaurain, R. Galand, B. Pelissier, J. Boussey, and M. Zelsmann: Microelectron. Eng. 87 (2010) 122.
16. Y. Tada, H. Yoshida, and A. Miyauchi: J. Photopolym. Sci. Technol. 20 (2007) 545.
17. C. Finder, M. Beck, J. Seekamp, K. Pfeiffer, P. Carlberg, I. Maximov, F. Reuther, E. L. Sarwe, S. Zankovich, J. Ahopelto, L. Montelius, C. Mayer, and C. M. S. Torres: Microelectron. Eng. 67-68 (2003) 623.
18. J. Kettle, P. Coppo, G. Lalev, C. Tattershall, S. Dimov, and M. L. Turner: Microelectron. Eng. 85 (2008) 850.
19. W. Hu, N. Lu, H. Y. Zhang, Y. Wang, N. Kehagias, V. Reboud, C. M. S. Torres, J. Y. Hao, W. Li, H. Fuchs, and L. F. Chi: Adv. Mater. 19 (2007) 2119.
20. M. Tamborra, M. Striccoli, M. L. Curri, J. A. Alducin, D. Mecerreyes, J. A. Pomposo, N. Kehagias, V. Reboud, C. M. S. Torres, and A. Agostiano: Small 3 (2007) 822.
21. H. Park and X. Cheng: Nanotechnology 20 (2009) 245308.
22. S. A. Schmid, K. H. Yim, M. H. Chang, Z. Zheng, W. T. S. Huck, R. H. Friend, J. S. Kim, and L. M. Herz: Phys. Rev. B 77 (2008) 115338.
23. Z. Zheng, K.-H. Yim, M. S. M. Saifullah, M. E. Welland, R. H. Friend, J.-S. Kim, and W. T. S. Huck: Nano Lett. 7 (2007) 987.
24. K. Kobayashi, N. Sakai, S. Matsui, and M. Nakagawa: Jpn. J. Appl. Phys. 49 (2010) 06GL07.
25. K. Kobayashi, S. Kubo, S. Matsui, and M. Nakagawa: J. Vac. Sci. Technol. B 28 (2010) C6M50.
26. S. Kubo and M. Nakagawa: Jpn. J. Appl. Phys. 49 (2010) 06GL03.
27. H. Hiroshima: Jpn. J. Appl. Phys. 45 (2006) 5602.
28. D. Truffier-Boutry, R. Galand, A. Beaurain, A. Francone, B. Pelissier, M. Zelsmann, and J. Boussey: Microelectron. Eng. 86 (2009) 669.
29. A. Hozumi, K. Ushiyama, H. Sugimura, and O. Takai: Langmuir 15 (1999) 7600.
30. M. Zelsmann, D. Truffier-Boutry, A. Francone, C. Alleaume, I. Kurt, A. Beaurain, B. Pelissier, B. Pepin-Donat, C. Lombard, and J. Boussey: J. Vac. Sci. Technol. B 27 (2009) 2873.