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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

32 nm imprint masks using variable shape beam pattern generators

(10) Selinidis, Kosta a Thompson, Ecron a Schmid, Gerard a Stacey, Nick a Perez, Joseph a Maltabes, John a Resnick, Douglas J a Yeo, Jeongho b Kim, Hoyeon b Eynon, Ben b

a MOLECULAR IMPRINTS INC (United States)

b SAMSUNG Electronics (South Korea)

Author keywords

Full field; Imprint lithography; NAND flash; Overlay; Pattern transfer; S FIL; Template

Indexed keywords

ARCHITECTURAL DESIGN; CADMIUM; CADMIUM COMPOUNDS; COMPUTER NETWORKS; ELECTRON BEAM LITHOGRAPHY; FLASH MEMORY; MICROFLUIDICS; MONOMERS; NANOTECHNOLOGY; OPTICS; PHOTORESISTORS; PHOTORESISTS; TECHNOLOGY; VARIATIONAL TECHNIQUES;

(OTDR) TECHNOLOGY; ADVANCED ILLUMINATION (CO); BEAM PATTERNS; CD UNIFORMITY (CDU); CHEMICALLY AMPLIFIED RESISTS (CAR); COMPETITIVE MANUFACTURING; CRITICAL DIMENSION (CD) CONTROL; DEVICE DESIGNS; FEATURE RESOLUTION; FULL-FIELD; HIGH QUALITY (HQ); IMAGE-PLACEMENT (IP); IMPRINT LITHOGRAPHY (IL); LOW VISCOSITY; MASK TECHNOLOGY; MULTI ELEMENTS; NEXT-GENERATION LITHOGRAPHY (NGL); PATTERN DENSITIES; PHOTO MASKING; PHOTOCURABLE; PROJECTION OPTICS (PO); RESIDUAL LAYERS; ROAD MAPS; SAMSUNG (CO); STEP-AND-FLASH IMPRINT LITHOGRAPHY (S-FIL); SUB-100 NM; TECHNICAL CHALLENGES; VARIABLE SHAPE;

NANOIMPRINT LITHOGRAPHY;

EID: 45549108835 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.793034 Document Type: Conference Paper

Times cited : (23)

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