Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography

Nanotechnology

Volumn 21, Issue 20, 2010, Pages

  Zhou, Weimin ^a,b   Min, Guoquan ^a   Song, Zhitang ^a   Zhang, Jing ^a   Liu, Yanbo ^a,b   Zhang, Jianping ^a  

^a Key Lab of Nanotechnology Promotion Center ^*  (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC ALUMINA OXIDE; ENHANCED EFFICIENCY; EXTRACTION EFFICIENCIES; GAN LIGHT-EMITTING DIODES; LIGHT OUTPUT POWER; MASS PRODUCTION; PATTERNED SURFACE; PHOTOLUMINESCENCE INTENSITIES; SOFT STAMPS; UV NANOIMPRINT LITHOGRAPHY;

EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NANOIMPRINT LITHOGRAPHY;

LIGHT EMITTING DIODES;

EID: 77951607303     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/20/205304     Document Type: Article

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