Methodologies for sub-1nm EOT TDDB evaluation

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Kauerauf, Thomas ^a   Degraeve, Robin ^a   Ragnarsson, Lars Åke ^a   Roussel, Philippe ^a   Sahhaf, Sahar ^a   Groeseneken, Guido ^a,b   O'Connor, Robert ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

gate dielectric; hard breakdown; high k; MOS; reliability; soft breakdow; TDDB; Weibull slope

Indexed keywords

HARD BREAKDOWN; HIGH-K; MOS; SOFT BREAKDOW; TDDB; WEIBULL SLOPE;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR);

RELIABILITY;

EID: 79959303404     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784444     Document Type: Conference Paper

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