On the trap generation rate in ultrathin SiON under Constant Voltage Stress

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 440-443

  Degraeve, R ^a   Kaczer, B ^a   Roussel, Ph ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Stress induced leakage current (SILC); Trap generation; Weibull distribution

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC BREAKDOWN; FUNCTIONS; LEAKAGE CURRENTS; WEIBULL DISTRIBUTION;

DATA SETS; EQUIVALENT OXIDE THICKNESS (EOT); IN-SITU STEAM GENERATED (ISSG); STRESS-INDUCED LEAKAGE CURRENT (SILC);

CMOS INTEGRATED CIRCUITS;

EID: 19944422441     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.103     Document Type: Conference Paper

References (5)

1. R. Degraeve, B. Govoreanu, B. Kaczer, J. Van Houdt, and G. Groeseneken, Measurement and statistical analysis of single trap current-voltage characteristics in ultrathin SiON, proc. of the IRPS, 2005.
2. B. Kaczer, R. Degraeve, R. O'Connor, P. Roussel, and G. Groeseneken Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT∼1nm) SiON films IEDM Techn. Dig. 2004
3. E.Y. Wu, E. Nowak, L.K. Han, D. Dufresne, and W.W. Abadeer Nonlinear characteristics of Weibull breakdown distributions and its impact on reliability projection for ultra-thin oxides IEDM Techn. Dig. 1999
4. J. Stathis, and D.J. DiMaria Reliability projection for ultra-thin oxides at low voltage IEDM Techn Dig. 1998
5. R. Degraeve, Ph. Roussel, G. Groeseneken, and H.E. Maes "A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides" Microelectronics Reliability 36 11/12 1996 1639 1642