Abrupt breakdown in dielectric/metal gate stacks: A potential reliability limitation?

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 773-775

  Kauerauf, T ^a,b   Degraeve, R ^a   Zahid, M B ^a,c   Cho, M ^a,d   Kaczer, B ^a   Roussel, Ph ^a   Groeseneken, G ^a,b   Maes, H ^a,b   De Gendt, S ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^d Seoul National University   (South Korea)

Author keywords

Dielectric breakdown (BD); Metal gate; Reliability

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); RELIABILITY THEORY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; ULTRATHIN FILMS;

ABRUPT CURRENT INCREASE; CONSTANT VOLTAGE STRESS (CVS); DIELECTRIC BREAKDOWN (BD); METAL GATE STACKS; POLY-SILICON GATE; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

MOSFET DEVICES;

EID: 27144497062     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.856015     Document Type: Article

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