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IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 792-798

A compact analytic model for the breakdown distribution of gate stack dielectrics

(3) Tous, Santi a Wu, Ernest Y b Suñé, Jordi a

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

b IBM MICROELECTRONICS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC MODELS; CELL-BASED; COMPACT MODEL; CUMULATIVE FAILURE; DUAL LAYER; GATE DIELECTRIC STACKS; GATE STACKS; GENERAL TOOLS; PROGRESSIVE BREAKDOWN; RELIABILITY ASSESSMENTS; SAMPLE SIZES; SINGLE LAYER;

DIELECTRIC MATERIALS; GATES (TRANSISTOR); RELIABILITY ANALYSIS; SOLVENTS;

GATE DIELECTRICS;

EID: 77957930281 PISSN: 15417026 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IRPS.2010.5488733 Document Type: Conference Paper

Times cited : (13)

References (8)

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2
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4
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5
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