Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 360-366

  Degraeve, R ^a   Kaczer, B ^a   Keersgieter, A D ^a   Groeseneken, G ^a  

^a IMEC   (Belgium)

Author keywords

Hard breakdown; Oxide reliability; Soft breakdown

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MOSFET DEVICES; OPTIMIZATION; RELIABILITY; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

HARD BREAKDOWN; SHORT CHANNEL NMOSFETS; SOFT BREAKDOWN;

SEMICONDUCTOR DEVICE TESTING;

EID: 0034994978     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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