Strong carrier confinement in Inx Ga1-x N/GaN quantum dots grown by molecular beam epitaxy

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 4, 2007, Pages

  Senes M ^a   Smith, K L ^a   Smeeton, T M ^a   Hooper, S E ^a   Heffernan, J ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33846448534     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.045314     Document Type: Article

References (36)

1. F. Widmann, J. Simon, B. Daudin, G. Feuillet, J. L. Rouviére, N. T. Pelekanos, and G. Fishmann, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.R15989 58, R15989 (1998).
2. M. Asada, Y. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. IEJQA7 0018-9197 10.1109/JQE.1986.1073149 22, 1915 (1986).
3. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.92959 40, 939 (1982).
4. A. D. Andreev and E. P. O'Reilly, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.62.15851 62, 15851 (2000).
5. T. Saito and Y. Arakawa, Physica E (Amsterdam) PELNFM 1386-9477 10.1016/S1386-9477(02)00515-5 15, 169 (2002).
6. S. Kako, M. Miyamura, K. Tachibana, K. Hoshino, and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1596382 83, 984 (2003).
7. A. Morel, M. Gallart, T. Taliereio, P. Lefebvre, B. Gil, J. Allégre, H. Mullier, B. Damilano, N. Grandjean, and J. Massies, Phys. Status Solidi A PSSABA 0031-8965 10.1002/1521-396X(200007)180:1<375::AID- PSSA375>3.0.CO;2-F 180, 375 (2000).
8. Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, and S. Nakamura, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.55.R1938 55, R1938 (1997).
9. T. Tackeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122247 73, 1691 (1998).
10. C. Adelmann, J. Simon, G. Feuillet, N. T. Pelekanos, B. Daudin, and G. Fishman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126098 76, 1570 (2000).
11. Y. Bartel, W. Dworzak, M. Strassburg, A. Hoffmann, A. Strittmatter, and D. Bimberg, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1790599 85, 1946 (2004).
12. B. Damilano, N. Grandjean, S. Dalmasso, and J. Massies, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125444 75, 3751 (1999).
13. I. L. Krestnikov, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66. 155310 66, 155310 (2002).
14. B. Damilano, S. Vezian, N. Grandjean, and J. Massies, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.111434 64, 2815 (1999).
15. O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126346 76, 2361 (2000).
16. T. Yamaguchi, S. Einfeldt, S. Figge, C. Kruse, C. Roder, and D. Hommel, in GaN, AlN, InN and their Alloys, edited by, C. Wetzel,,, B. Gil,,, M. Kuzuhara,, and, M. Manfra,, MRS Symposium Proceedings No. 831 (Materials Research Society, Pittsburgh, 2005), p. 69.
17. C. Adelmann, J. Simon, N. T. Pelekanos, Y. Samson, G. Feuillet, and B. Daudin, Phys. Status Solidi A PSSABA 0031-8965 10.1002/(SICI)1521-396X(199911) 176:1<639::AID-PSSA639>3.0.CO;2-Z 176, 639 (1999).
18. N. Grandjean and J. Massies, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.120970 72, 1078 (1998).
19. K. Tachibana, T. Someya, and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.123078 74, 383 (1999).
20. K. Tachibana, T. Someya, Y. Arakawa, R. Werner, and A. Forchel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125092 75, 2605 (1999).
21. Y. G. Musikhin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1462868 80, 2099 (2002).
22. K. Smith (unpublished).
23. C. Kammerer, C. Voisin, G. Cassabois, C. Delalande, P. Roussignol, F. Klopf, J. P. Reithmaier, A. Forchel, and J. M. Gérard, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.041306 66, 041306 (R) (2002).
24. D. Birkedal, K. Leosson, and J. M. Hvam, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.87.227401 87, 227401 (2001).
25. J. W. Robinson, J. H. Rice, A. Jarjour, J. Smith, R. A. Taylor, R. A. Oliver, G. A. Briggs, M. J. Kappers, C. J. Humphreys, and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1614831 83, 2674 (2003).
26. F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouviére, and N. Pelekanos, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.367878 83, 7618 (1998).
27. G. Wang, S. Fafard, D. Leonad, J. E. Bowers, J. L. Merz, and P. M. Petroff, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.38.L1357 38, L1357 (1998).
28. S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1506393 92, 4441 (2002).
29. T. Kuroda, A. Tackeuchi, and T. Sota, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126744 76, 3753 (2000).
30. S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talieno, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1753085 96, 180 (2004).
31. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.R10024 56, R10024 (1997).
32. A. Hangleiter, F. Hitzel, S. Lahmann, and U. Rossow, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1601310 83, 1169 (2003).
33. N. Liu, J. Tersoff, O. Baklenov, A. L. Holmes, and C. K. Shih, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.84.334 84, 334 (2000).
34. A. Lemaître, G. Patriarche, and F. Glas, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1811796 85, 3717 (2004).
35. Y. H. Cho, B. J. Kwon, J. Barjon, J. Brault, B. Daudin, H. Mariette, and L. S. Dang, Phys. Status Solidi C ZZZZZZ 1610-1634 4, 1173 (2003).
36. N. Garro, A. Cros, J. A. Budagosky, A. Canterero, A. Vinattieri, M. Gurioli, S. Fouta, H. Mariette, and B. Daudin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1977210 87, 011101 (2005).