Reduction of carrier in-plane mobility in group-III nitride based quantum wells: the role of internal electric fields

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 61-66

  Gallart, M ^a   Lefebvre, P ^a   Morel, A ^a   Taliercio, T ^a   Gil, B ^a   Allegre J ^a   Mathieu, H ^a   Damilano, B ^b   Grandjean, N ^b   Massies, J ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; EXCITONS; LIGHT EMISSION; MOLECULAR DYNAMICS; PHOTOLUMINESCENCE; REDUCTION; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; THERMAL EFFECTS;

CARRIER IN PLANE MOBILITY; INTERNAL ELECTRIC FIELDS; RECOMBINATION DYNAMICS; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4243884030     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<61::AID-PSSA61>3.0.CO;2-R     Document Type: Article

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