Room-temperature blue-green emission from InGan/GaN quantum dots made by strain-induced islanding growth

Applied Physics Letters

Volumn 75, Issue 24, 1999, Pages 3751-3753

  Damilano, B ^a   Grandjean, N ^a   Dalmasso, S ^a   Massies, J ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001296059     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125444     Document Type: Article

References (22)

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19. 0.85N QW, a calculation using envelop function formalism including both the Rydberg and the built-in electric field gives a transition energy of 2.711 eV [the piezoelectric field for 15% In composition is 1.3 MV/cm [Takeuchi et al. Jpn. J. Appl. Phys., Part 2 36, L382 (1997)]. If we consider a well width variation of ±0.25 nm. we obtain an energy variation of 60 meV. This accounts well for the FWHM of the QD PL spectra [Fig. 2(a) 9 MLS].
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