Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 2066-2068

  Senes M ^a   Smith, K L ^a   Smeeton, T M ^a   Hooper, S E ^a   Heffernan, J ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

InGaN GaN; Photoluminescence; Piezoelectric field; Quantum dots

Indexed keywords

ELECTRIC FIELDS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER CONFINEMENT; PHOTOLUMINESCENCE INTENSITY; PIEZOELECTRIC FIELDS; SINGLE DOT SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 41349093521     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.09.105     Document Type: Article

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