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Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness

(4) Tan, L T a Martin, R W a O'Donnell, K P a Watson, I M a

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

HUANG-RHYS FACTORS; INGAN/GAN QUANTUM WELLS; LO-PHONON SATELLITES; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33748511241 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2345246 Document Type: Article

Times cited : (37)

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