Morphological and electrical comparison of GeOI enriched structures obtained from SOI and sSOI substrates

ECS Transactions

Volumn 19, Issue 4, 2009, Pages 93-98

  Damlencourt, J F ^a   Vincent, B ^a   Clavelier, L ^a   Le Royerl, C ^d   Campidelli, Y ^b   Bernasconi, S ^b   Morand, Y ^b   Nguyen, T ^c   Cristoloveanu, S ^c  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c IMEP LAHC   (France)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; GERMANIUM COMPOUNDS; SILICON WAFERS; SUBSTRATES;

BI-LAYER; CRYSTALLINE DEFECTS; ENRICHMENT TECHNIQUES; HIGH QUALITY; HIGH RESISTIVITY; PLASTIC RELAXATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 74949126838     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3117396     Document Type: Conference Paper

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