Schottky barrier height extraction in ohmic regime: Contacts on fully processed GeOI substrates

Journal of the Electrochemical Society

Volumn 156, Issue 7, 2009, Pages

  Hutin, L ^a   Le Royer, C ^a   Tabone, C ^a   Delaye, V ^a   Nemouchi, F ^a   Aussenac, F ^a   Clavelier, L ^a   Vinet, M ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS RELATIONSHIP; CONTACT PROPERTIES; CONTACT RESISTIVITIES; DEVICE INTEGRATION; ELECTRICAL PROPERTY; EXPERIMENTAL CONDITIONS; GERMANIUM-ON-INSULATOR; INTERFACE PREPARATION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METALLIC CONTACTS; N-DOPED; OHMIC BEHAVIOR; SCHOTTKY BARRIER HEIGHTS; SOURCE AND DRAINS; TECHNOLOGICAL FACTORS; TUNNEL CURRENTS;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GERMANIUM; METAL RECOVERY; MOSFET DEVICES; PHOSPHORUS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; THERMIONIC EMISSION;

SEMICONDUCTING GERMANIUM;

EID: 65949095211     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3121562     Document Type: Article

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