V th variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 74-75

  Lee, S H ^a,f   Huang, J ^a   Majhi, P ^a,b   Kirsch, P D ^a   Min, B G ^c   Park, C S ^a   Oh, J ^a   Loh, W Y ^a   Kang, C Y ^a   Sassman, B ^a   Hung, P Y ^a   McCoy, S ^d   Chen, J ^d   Wu, B ^e   Moori, G ^e   Heh, D ^a   Young, C ^a   Bersuker, G ^a   Tseng, H H ^a   Banerjee, S K ^f   Jammy, R ^a   more..

^a SEMATECH   (United States)

^b INTEL CORPORATION   (United States)

^c Jusung Engineering Company Limited   (South Korea)

^d Mattson Engineering   (United States)

^e Poongsan Engineering

^f UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE FIRST; GE DIFFUSION; KEY PARAMETERS; P-MOSFETS; PMOSFET; SIGE CHANNELS; THERMAL BUDGET;

GERMANIUM; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; STRAIN CONTROL;

SILICON ALLOYS;

EID: 71049183125     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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8. B. Bindu et al., IEEE TED, 53 (6), p.1411 (2006)