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Volumn 324, Issue 1, 2011, Pages 7-14

Effect of initial substrate conditions on growth of cubic silicon carbide

(11) Vasiliauskas, R a Marinova, M b Syvajarvi M a Liljedahl, R a Zoulis, G c Lorenzzi, J d Ferro, G d Juillaguet, S c Camassel, J c Polychroniadis, E K b Yakimova, R a

a LINKÖPING UNIVERSITY (Sweden)

b ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

c UNIVERSITÉ MONTPELLIER 2 (France)

d UNIVERSITÉ CLAUDE BERNARD LYON 1 (France)

Author keywords

A1. Characterization; A1. Nucleation; A1. Substrates; A3. Vapor phase epitaxy; B1. Cubic silicon carbide

Indexed keywords

A1. CHARACTERIZATION; A1. NUCLEATION; A1. SUBSTRATES; A3. VAPOR PHASE EPITAXY; CUBIC SILICON CARBIDE;

BUFFER LAYERS; EPITAXIAL GROWTH; SILICON CARBIDE; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79957841154 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.03.024 Document Type: Article

Times cited : (29)

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