Growth mechanism of 3C-SiC heteroepitaxial layers on α-SiC by VLS

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 195-198

  Ferro, Gabriel ^a   Soueidan, Maher ^a,b   Kim Hak, Olivier ^a   Dazord, Jacques ^a   Cauwet, François ^a   Nsouli, Bilal ^b  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b NATIONAL COUNCIL FOR SCIENTIFIC RESEARCH   (Lebanon)

Author keywords

3C SiC; Germanium; Growth mechanism; Heteroepitaxy; Islands; Liquid phase; VLS

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM; SI-GE ALLOYS; SUBSTRATES; TEMPERATURE;

3C-SIC; GEOMETRICAL ASPECTS; GROWTH MECHANISMS; HETEROEPITAXIAL LAYERS; ISLANDS; LIQUID PHASE; TEMPERATURE INCREASE; VAPOR-LIQUID-SOLID MECHANISM;

SILICON CARBIDE;

EID: 63849167482     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

1. M. Soueidan and G. Ferro, Adv. Funct. Mater. 16 (2006), p. 975.
2. M. Soueidan, O. Kim-Hak, G. Ferro, P. Chaudouet, D. Chaussende, B. Nsouli, Y. Monteil, Mater. Sci. Forum Vols. 556-557 (2007), p. 187.
3. O. Kim-Hak, M. Soueidan, G. Ferro, O. Dezellus, A. Andreadou, E. Polychroniadis, J.C. Viala, Poster WeP-39 presented at ICSCRM2007.
4. R.I. Scace and G.A. Slack, J. chem. Phys. 30(6) (1959), p. 1551.
5. H. Matsunami, T. Kimoto, Mater. Sci. & Eng. R20 (1997), p. 125.
6. M. Soueidan, O. Kim-Hak, G. Ferro, N. Habka, B. Nsouli, Poster MoP-39 presented at ICSCRM2007.