Energies and electronic properties of isolated and interacting twin boundaries in 3C-SiC, Si, and diamond

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 11, 2003, Pages

  Iwata, P ^a,b   Lindefelt, U ^a,d   Oberg S ^b   Briddon, R ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d MID SWEDEN UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND; SILICON; SILICON CARBIDE;

AB INITIO CALCULATION; ARTICLE; CRYSTAL; ELECTRON; ELECTRONICS; ENERGY; LOW TEMPERATURE PROCEDURES; MOTION; POLARIZATION;

EID: 0344014218     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.113202     Document Type: Article

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