Surface preparation of α-SiC for the epitaxial growth of 3C-SiC

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Soueidan, M ^a,b   Ferro, G ^a   Dazord, J ^a   Monteil, Y ^a   Younes, G ^c  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b NATIONAL COUNCIL FOR SCIENTIFIC RESEARCH   (Lebanon)

^c BEIRUT ARAB UNIVERSITY   (Lebanon)

Author keywords

A1. Atomic force microscopy; A1. Etching; A1. Surface structure; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; CARBON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; HEAT TREATMENT; HYDROGEN; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SURFACE STRUCTURE; SURFACE TREATMENT; ULTRASONICS;

CHEMICAL VAPOR DEPOSITION PROCESS; DOUBLE POSITION BOUNDARIES (DPB); HOMOGENIZATION; LATTICE MISMATCH; ULTRASONIC BATH;

SILICON CARBIDE;

EID: 15944401336     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.164     Document Type: Conference Paper

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