Influence of crystal growth conditions on nitrogen incorporation during PVT growth of SiC

Materials Research Society Symposium Proceedings

Volumn 1069, Issue , 2008, Pages 23-31

  Hansen, Darren ^a   Loboda, Mark ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; NITROGEN;

CHEMICAL SPECIES; CRYSTAL GROWTH PROCESS; DOPANT ACTIVATION; ELEMENTAL COMPOSITIONS; GROWTH CONDITIONS; HOLISTIC APPROACH; NITROGEN INCORPORATION; NITROGEN PARTIAL PRESSURES;

SILICON CARBIDE;

EID: 55849107725     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1069-d01-04     Document Type: Conference Paper

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