Investigation of domain evolution in sublimation epitaxy of SiC

Journal of Crystal Growth

Volumn 193, Issue 1-2, 1998, Pages 101-108

  Tuominen, M ^a,b   Yakimova, R ^a,b   Kakanakova Georgieva, A ^a   MacMillan, M F ^a   Syvajarvi M ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Outokumpu Semitronic AB   (Sweden)

Author keywords

Domain misorientation; Silicon carbide; Sublimation epitaxy; X ray diffraction

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; SILICON CARBIDE; SUBLIMATION; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

DOMAIN MISORIENTATION; SUBLIMATION EPITAXY;

EPITAXIAL GROWTH;

EID: 0032475278     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00466-7     Document Type: Article

References (7)

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