Application of LTPL investigation methods to CVD-grown SiC

Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 549-556

  Camassel, Jean ^a   Juillaguet, Sandrine ^a   Zielinski, Marin ^b   Balloud, Carole ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CRHEA CNRS   (France)

Author keywords

3C SiC; 4H SiC; Low temperature photoluminescence; Nitrogen and aluminum doping; Secondary ion mass spectroscopy; Silicon carbide

Indexed keywords

DATA REDUCTION; DOPING (ADDITIVES); OPTICAL SYSTEMS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

LOW-TEMPERATURE PHOTOLUMINESCENCE (LTPL); OPTICAL MEASUREMENTS; RESIDUAL DOPING;

PHOTOLUMINESCENCE;

EID: 33845588202     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200606472     Document Type: Review

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