A stacked memory device on logic 3D technology for ultra-high-density data storage

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Kim, Jiyoung ^a,b   Hong, Augustin J ^a   Kim, Sung Min ^a,b   Shin, Kyeong Sik ^a   Song, Emil B ^a   Hwang, Yongha ^a   Xiu, Faxian ^a   Galatsis, Kosmas ^a   Chui, Chi On ^a   Candler, Rob N ^a   Choi, Siyoung ^b   Moon, Joo Tae ^b   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

3D MEMORY; 3D TECHNOLOGY; CHIP ARCHITECTURE; CMOS DEVICES; DATA STORAGE; FLASH MEMORY DEVICES; MEMORY DENSITY; MEMORY DEVICE; THREE-DIMENSIONAL (3D) MEMORY; VERTICAL INTEGRATION;

EQUIPMENT; FLASH MEMORY; THREE DIMENSIONAL;

MEMORY ARCHITECTURE;

EID: 79956126277     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254006     Document Type: Article

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