Memory technologies for 50 nm and beyond

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 685-688

  Kinam, Kim ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; THREE DIMENSIONAL;

MEMORY ARRAY; TECHNOLOGICAL SOLUTIONS;

NANOTECHNOLOGY;

EID: 34547329326     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306437     Document Type: Conference Paper

References (18)

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2. Kinam Kim. IEDM Dig. Tech. Papers, pp.333-336, 2006
3. Kinam Kim and et al., ISSCC Dig. Tech. Papers, pp. 576-577, 2005.
4. Kinam Kim and et al, IEEE Trans. Electron Dev. 45, pp.598-608,1998.
5. Y. Park and Kinam Kim, Technical Digest IEDM, pp.391, 2001.
6. J. Y. Kim and et al. VLSI Technical Digest, pp. 11-12, 2003.
7. J. Y. Kim and et al., VLSI Technical Digest, pp.34-35, 2005.
8. D. G. Park and et al., Proceedings of ICSICT, pp.35-38, 2004.
9. Y. S. Kim and et al, Technical Digest IEDM, 2005.
10. S-M Jung and et al, to be published
11. Kinam Kim and et al Technical Digest VLSI-TSA, pp.88-94, 2005.
12. Y. Shin and et al, Technical Digest IEDM, pp. 327-330, 2005.
13. C-H Lee and et al, technical digest of 2006 VLSI technology symposium, pp.26-27, 2006
14. P. Xuan and et al, Technical Digest IEDM, pp 609-612, 2003.
15. Kinam Kim, nikkei microdevices, pp.2-1-2-24, digest of technical presentation, 2006
16. J.H. Oh and et al., submitted to 2006 IEDM
17. Y.M. Kang and et al., technical digest of 2006 VLSI technology symposium, pp.152-153, 2006
18. Kinam Kim, plenary talk presentation of 2006 ISIF, 2006