A high cost-performance and reliable 3-Level MLC NAND flash memory using virtual page cell architecture

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 34-35

  Park, Ki Tae ^b   Choi, Jungdal ^b   Cho, Sungkyu ^a   Choi, Yunho ^a   Kim, Kinam ^b  

^a Flash Solution Team   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751050873     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629482     Document Type: Conference Paper

References (3)

1. D. Byeon et al., ISSCC Tech..Dig., pp. 46, 2005.
2. T. Tanaka et al., VLSI Sympo. Tech..Dig., pp. 65, 1997.
3. K. Takeuchi et al., VLSI Sympo. Tech..Dig., pp. 67, 1997