Mass fabrication of resistive random access crossbar arrays by step and flash imprint lithography

Nanotechnology

Volumn 20, Issue 44, 2009, Pages

  Yun, Dae Keun ^a   Kim, Ki Don ^a   Kim, Sungho ^b   Lee, Ji Hye ^a   Park, Hyeong Ho ^a   Jeong, Jun Ho ^a   Choi, Yang Kyu ^b   Choi, Dae Geun ^a  

^a Korea Institute of Machine and Materials   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FABRICATION; INDUCTIVELY COUPLED PLASMA; NANOIMPRINT LITHOGRAPHY; NICKEL OXIDE; REACTIVE ION ETCHING;

CROSSBAR ARRAYS; HIGH RESOLUTION; HIGH-SPEED PROCESS; LITHOGRAPHIC TECHNOLOGIES; LOW PRESSURES; MASS FABRICATION; RANDOM ACCESS; RESISTIVE SWITCHING; RESOLUTION CAPABILITY; STEP-AND-FLASH IMPRINT LITHOGRAPHY;

SILICON WAFERS;

EID: 84861108056     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/44/445305     Document Type: Article

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