Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies fT>60 GHz

IEEE Electron Device Letters

Volumn 21, Issue 12, 2000, Pages 549-551

  Chen, Ching Hui ^a   Coffie, Robert ^a   Krishnamurthy, K ^a   Keller, Stacia ^a   Rodwell, Mark ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND AMPLIFIERS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM;

CUT-OFF FREQUENCY;

FIELD EFFECT TRANSISTORS;

EID: 0034504192     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.887461     Document Type: Article

References (10)

1. Y.-F. Wu et al., "GaN-based FET's for microwave power amplification," IEICE Trans. Electron., vol. E82-C, pp. 1895-905, 1999.
2. A. T. Ping et al., "DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates," IEEE Electron Device Lett., vol. 19, pp. 54-56, 1998.
3. S. T. Sheppard et al., "High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrate," IEEE Electron. Device Lett., vol. 20, pp. 161-163, 1999.
4. Y. F. Wu et al., "High Al-content AlGaN/GaN HEMT's on SiC substrates with very-high power performance," in IEDM Tech. Dig., 1999, IEDM 99-925.
5. N. X. Nguyen, "Private communication," unpublished, 1999.
6. E. O. Johnson, "Physical limitations on frequency and power parameters of transistors," RCA Rev., pp. 163-177, 1965.
7. T. M. Barton and P. H. Ladbrooke, "The role of the device surface in the high voltage behavior of the GaAs MESFET," Solid-State Electron., vol. 29, pp. 807-813, 1986.
8. K. K. Chu, J. A. Smart, J. R. Shealy, and L. F. Eastman, "AlGaN-GaN piezoelectric HEMT's with submicron gates on sapphire," in Proc. Conf. Compound Semiconductor Power Transistors and State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX), Boston, MA, Nov. 1998.
9. S. Asai, F. Murai, and H. Kodera, "GaAs dual-gate Schottky-barrier FET's for microwave frequencies," IEEE Trans. Electron Devices, vol. ED-22, pp. 897-904, Oct. 1975.
10. Y. K. Chen, G. W. Wang, D. C. Radulescu, and L. F. Eastman, "Comparison of microwave performance between single-gate and dual-gate MODFETs," IEEE Electron. Device Lett., vol. 9, pp. 59-61, Feb. 1988.