Ge islanding growth on nitridized Si and the effect of Sb surfactant

Journal of Physics Condensed Matter

Volumn 14, Issue 39, 2002, Pages 8939-8946

  Hu, Yanfang ^a,c   Wang, Xue Sen ^b,c   Cue, Nelson ^c   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTAL ORIENTATION; DEPOSITION; FILM GROWTH; IMAGE ANALYSIS; INTERFACIAL ENERGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM DOTS; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

ISLANDING OVERLAY GROWTH;

SILICON NITRIDE;

EID: 0037037801     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/39/303     Document Type: Article

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