Complete prevention of reaction at HfO2/Si interfaces by 1 nm silicon nitride layer

Surface Science

Volumn 602, Issue 11, 2008, Pages 1948-1953

  Kobayashi, Hikaru ^a,b   Imamura, Kentaro ^a,b   Fukayama, Ken ichi ^a,b   Im, Sung Soon ^a,b   Maida, Osamu ^a,b   Kim, Young Bae ^c   Kim, Hyun Chul ^c   Choi, Duck Kyun ^c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Hanyang University   (South Korea)

Author keywords

Hafnium oxide; High k dielectrics; Metal insulator semiconductor (MIS) structures; Semiconductor insulator interfaces; Silicon nitride; Sputtering; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; CURRENT DENSITY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDATION; SILICON NITRIDE; SPUTTERING; VALENCE BANDS;

CONDUCTION CHANNELS; HAFNIUM OXIDE; LEAKAGE CURRENT DENSITY; METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES; SEMICONDUCTOR-INSULATOR INTERFACES;

HAFNIUM COMPOUNDS;

EID: 44649098115     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.03.031     Document Type: Article

References (39)

1. Puthenkovilakam R., Lin Y.-S., Choi J., Lu J., Blom H.-O., Pianetta P., Devine D., Sendler M., and Chang J.P. J. Appl. Phys. 97 (2005) 023704
2. Hoshino Y., Kido Y., Yamamoto K., Hayashi S., and Niwa M. Appl. Phys. Lett. 81 (2002) 2650
3. Lu J., Aarik J., Sundqvist J., Kukli K., Hårsta A., and Carlsson J.-O. J. Crystal Growth 273 (2005) 510
4. Park P.K., Roh J.-S., Choi B.H., and Kang S.-W. Electrochem. Solid-State Lett. 9 (2006) F34
5. Senzaki Y., Park S., Chatham H., Bartholomew L., and Nieveen W. J. Vac. Sci. Technol. A 22 (2004) 1175
6. Pezzi R.P., Morais J., Dahmen S.R., Bastos K.P., Miotti L., Soares G.V., and Freire Jr. F.L. J. Vac. Sci. Technol. A 21 (2003) 1424
7. Tan R., Azuma Y., and Kojima I. Appl. Surf. Sci. 241 (2005) 135
8. He G., Liu M., Zhu L.Q., Chang M., Fang Q., and Zhang L.D. Surf. Sci. 576 (2005) 67
9. Lopez C.M., and Irene E.A. J. Appl. Phys. 99 (2006) 024101
10. Renault O., Samour D., Damlencourt J.-F., Blin D., Martin F., Marhon S., Barrett N.T., and Besson P. Appl. Phys. Lett. 81 (2002) 3627
11. Nagasato Y., and Ueno T. Jpn. J. Appl. Phys. 44 (2005) 1665
12. Wang L., Xue K., Xu J.B., Huang A.P., and Chu P.K. Appl. Phys. Lett. 88 (2006) 072903
13. Sayan S., Garfunkel E., and Suzer S. Appl. Phys. Lett. 80 (2002) 2135
14. Maikap S., Lee J.-H., Mahapatra R., Pal S., No Y.S., Choi W.-K., Ray S.K., and Kim D.-Y. Solid-State Electron. 49 (2005) 524
15. Zhang Z., Xia B., Gladfelter W.L., and Campbell S.A. J. Vac. Sci. Technol. A 24 (2006) 418
16. Ota H., Yasuda N., Yasuda T., Morita Y., Miyata N., Tominaga K., Kadoshima M., Migita S., Nabatame T., and Toriumi A. Jpn. J. Appl. Phys. 44 (2005) 1698
17. Kamiyama S., Miura T., and Nara Y. J. Electrochem. Soc. 152 (2005) G903
18. Maida O., Fukayama K., Takahshi M., Kobayashi H., Kim Y.-K., Kim H.-C., and Choi D.-K. Appl. Phys. Lett. 89 (2006) 122112
19. Lai C.S., and Fan K.M. Jpn. J. Appl. Phys. 44 (2005) 5964
20. Pan T.M., Lei T.F., Wen H.C., and Chao T.S. IEEE Trans. Electron. Dev. 48 (2001) 907
21. Nieh R., Choi R., Gopalan S., Onishi K., Kang C.S., Cho H.-J., Krishnan S., and Lee J.C. Appl. Phys. Lett. 81 (2002) 1663
22. Kobayashi H., Mizokuro T., Nakato Y., Yoneda K., and Todokoro Y. Appl. Phys. Lett. 71 (1997) 1978
23. Mizokuro T., Yoneda K., Todokoro Y., and Kobayashi H. J. Appl. Phys. 85 (1999) 2921
24. Takahashi M., Mizokuro T., Nishioka Y., and Kobayashi H. Surf. Sci. 518 (2002) 72
25. Wilk G.D., Wallance R.M., and Anthony J.M. J. Appl. Phys. 87 (2000) 484
26. Kato H., Nango T., Miyagawa T., Katagiri T., Seol K.S., and Ohki Y. J. Appl. Phys. 92 (2002) 1106
27. Fang Q., Zhang J.-Y., Wang Z., Modreanu M., O'Sullivan B.J., Hurley P.K., Leedham T.L., Hywel D., Audier M.A., Jimenez C., Senateur J.-P., and Boyd I.W. Thin Solid Films 453 (2004) 203
28. Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., and Hollinger G. Phys. Rev. B 38 (1988) 6084
29. Nicollian E.H., and Goetzberger A. Bell Syst. Tech. J. 46 (1967) 1055
30. Xu Y.-N., and Ching W.Y. Phys. Rev. B 51 (1995) 17379
31. Peden C.H.F., Rogers Jr. J.W., Shinn N.D., Kidd K.B., and Tsang K.L. Phys. Rev. B 47 (1995) 15622
32. Yao Z.-Q. J. Appl. Phys. 78 (1995) 2906
33. Takahashi H., Toyoda S., Okabayashi J., Kumigashira H., Oshima M., Sugita Y., Liu G.L., Liu Z., and Usuda K. Appl. Phys. Lett. 87 (2005) 012903
34. Asano A., Asuha, Maida O., Todokoro Y., and Kobayashi H. Appl. Phys. Lett. 80 (2002) 4552
35. Sakoda T., Matsumura M., and Nishioka Y. Appl. Surf. Sci. 117/118 (1997) 241
36. Li Q., Wang S.J., Lim P.C., Chai J.W., Huan A.C.H., and Ong C.K. Thin Solid Films 462-463 (2004) 106
37. Nicollian E.H., and Brews J.R. MOS (Metal Oxide Semiconductor) Physics and Technology (1982), Wiley, New York (Chapter 15)
38. Kobayashi H., Ishida T., Nakato Y., and Tsubomura H. J. Appl. Phys. 69 (1991) 1736
39. Card H.C., and Rhoderick E.H. J. Phys. D 4 (1971) 1589