Bias-dependent atomic images of a quadruplet silicon-nitride monolayer on the Si(111) surface

Surface Science

Volumn 466, Issue 1-3, 2000, Pages

  Morita, Yukinori ^a   Tokumoto, Hiroshi ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILICON NITRIDE; SURFACE ROUGHNESS;

ATOMIC RESOLUTION IMAGES;

SILICON;

EID: 0034315406     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00791-3     Document Type: Article

References (15)

1. Schrott A.G., Fain J.S.C. Surf. Sci. 111:1981;39.
2. Schrott A.G., Fain J.S.C. Surf. Sci. 123:1982;204.
3. Nishijima M., Kobayashi H., Edamoto K., Onchi M. Surf. Sci. 137:1984;473.
4. Nishijima M., Edamoto K., Kubota Y., Kobayashi H., Onchi M. Surf. Sci. 158:1985;422.
5. Edamoto K., Tanaka S., Onchi M., Nishijima M. Surf. Sci. 167:1986;285.
6. Wang H.-C., Lin R.-F., Wang X. Surf. Sci. 188:1987;199.
7. Hamers R.J., Avouris P., Bozso F. Phys. Rev. Lett. 59:1987;2071.
8. Khramstsova E.A., Saranin A.A., Lifshits V.G. Surf. Sci. 280:1993;L259.
9. Bauer E., Wei Y., Muller T., Pavlovska A., Tsong I.S.T. Phys. Rev. B. 51:1995;17891.
10. Rottger B., Kliese R., Neddermeyer H. J. Vac. Sci. Technol. B. 14:1996;1051.
11. Tabe M., Yamamoto T. Surf. Sci. 376:1997;99.
12. Ha J.S., Park K.-H., Yun W.S., Ko Y.-J., Kim S.K. Surf. Sci. 426:1999;373.
13. Morita Y., Tokumoto H. Surf. Sci. 443:1999;L1037.
14. Liu A.Y., Cohen M.L. Phys. Rev. B. 41:1990;10727.
15. Feenstra R.M., Stroscio J.A. J. Vac. Sci. Technol. B. 5:1987;923.