Interaction of low-energy nitrogen ions with an Si.111/-7 × 7 surface: STM and LEED investigations

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Ha, J S ^a   Park, K H ^a   Yun, W S ^a   Lee, E H ^a   Park, S J ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION SPOTS; INITIAL STAGES; LEED PATTERNS; LOW ENERGIES; NITRIDATION TEMPERATURE; NITROGEN ATOM; NITROGEN IONS; REACTING SPECIES; SCANNING TUNNELING MICROSCOPY (STM); SI (1 1 1); STM IMAGES; SYMMETRY DIRECTION; THERMAL STABILITY;

ADATOMS; DIFFRACTION; LOW ENERGY ELECTRON DIFFRACTION; NITRIDATION; NITROGEN; SCANNING TUNNELING MICROSCOPY; SILICON NITRIDE; THERMODYNAMIC STABILITY;

SILICON;

EID: 0001576941     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051190     Document Type: Article

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