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Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

(6) Goodman, Kevin D a Protasenko, Vladimir V a Verma, Jai a Kosel, Thomas H a Xing, Huili G a Jena, Debdeep a

a University of Notre Dame (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BROAD SPECTRAL; DEFECT-FREE; EMISSION QUANTUM YIELD; EMISSION SPECTRUMS; GREEN EMISSIONS; GREEN LUMINESCENCE; INDIUM CONTENT; INDIUM GALLIUM NITRIDE; INHOMOGENEITIES; LOW TEMPERATURES; NANOWIRE GROWTH; NONUNIFORM; OPTICAL EMISSIONS; OPTICAL RANGE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SILICON SUBSTRATES; SINGLE WIRES; STRESS FREE; VISIBLE SPECTRA; WIRE SURFACES;

EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; OPTICAL INSTRUMENTS; QUANTUM YIELD; SEMICONDUCTING SILICON COMPOUNDS;

WIRE;

EID: 79955725059 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3575323 Document Type: Article

Times cited : (50)

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