InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties

Applied Surface Science

Volumn 255, Issue 13-14, 2009, Pages 6705-6709

  Wu, K M ^a   Pan, Y ^a   Liu, C ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

InGaN; Molecular beam epitaxy; Nanorods

Indexed keywords

ELECTRON EMISSION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANORODS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR ALLOYS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

C-PLANE SAPPHIRE SUBSTRATES; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; GROWTH MECHANISMS; INGAN; PARTIAL RELEASE; PHOTOLUMINESCENCE SPECTRUM; RADIO FREQUENCY MOLECULAR BEAM EPITAXY; STRUCTURAL AND OPTICAL PROPERTIES;

GALLIUM ALLOYS;

EID: 63449104932     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.02.065     Document Type: Article

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