NBTI reliability on high-k metal-gate SiGe transistor and circuit performances

Microelectronics Reliability

Volumn 51, Issue 5, 2011, Pages 914-918

  Yuan, Jiann Shiun ^a   Yeh, Wen Kuan ^b   Chen, Shuyu ^a   Hsu, Chia Wei ^b  

^a University of Central Florida   (United States)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CASCODE; CHANNEL CONTROL; CIRCUIT PERFORMANCE; EXPERIMENTAL DATA; INTERFACE STATE; METAL-GATE; MODEL PARAMETERS; MOSFETS; NEGATIVE BIAS TEMPERATURE INSTABILITY; OUTPUT POWER; P-MOSFETS; POWER-ADDED EFFICIENCY; RF-CIRCUITS;

CIRCUIT SIMULATION; DIGITAL CIRCUITS; MOSFET DEVICES; RELIABILITY; SILICON ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79953663683     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.12.015     Document Type: Article

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