Impact of NBTI on the performance of 35nm CMOS digital circuits

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 440-443

  Wang, Yangang ^a   Zwolinski, M ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Degradation; Inverters; Negative bias temperature instability (NBTI); SRAM; Static noise margin

Indexed keywords

CMOS DIGITAL CIRCUITS; CMOS INVERTERS; DEVICE PHYSICS; INVERTERS; LONG TERMS; MOS FETS; NANO-SCALE DEVICES; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); POWER DISSIPATIONS; POWER-SUPPLY VOLTAGES; SRAM; STATIC NOISE MARGIN;

DEGRADATION; DIGITAL INTEGRATED CIRCUITS; ELECTRIC POWER UTILIZATION; INTEGRATED CIRCUITS; MOSFET DEVICES; NANOTECHNOLOGY; NEGATIVE TEMPERATURE COEFFICIENT; STATIC RANDOM ACCESS STORAGE;

THERMODYNAMIC STABILITY;

EID: 60749127044     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734569     Document Type: Conference Paper

References (22)

1. D. K. Schroder and E. H. Nicollian, J. Appl. Phys., 94, p.l (2003)
2. S. S. Tan, T. P. Chen and C. H. Ang et al., IEEE Electron Device Letts., 25, p.504 (2004)
3. J. Ushio, T. Maruizumi and K. K-Abdelghafar, Appl. Phys. Letts., 81, p. 1818 (2002)
4. B. Kaczer, V. Arkhipov and R. Degraeve et al., Appl. Phys. Letts., 86, art. no. 143506 (2005)
5. M. Denais, A. Bravaix and V. Huard et al., IEEE IEDM, p. 109 (2004)
6. A. S. Oates, IEEE IEDM, p.923 (2003)
7. M. A. Alam and S. Mahapatra, Microelectron. Reliab., 45, p.71 (2005)
8. D. Varghese, S. Mahapatra, and M. A. Alam, IEEE Electron Device Lett., 26, p.572 (2005)
9. G. Chen, M. F. Li and C. H. Ang et al., IEEE Electron Device Lett., 23, p.734 (2002)
10. T. Yang, M. F. Li and C. Shen et al., IEEE VLSI Symp. Tech. Dig., p.92 (2005)
11. K. Kang, M. A. Alam and K. Roy, IEEE IRPS, p.16 (2007)
12. B. C. Paul, K. Kang and H. Kufluoglu, et al., IEEE Electron Device Letts., 26, p.560 (2005)
13. N. K. Jha, P. S. Reddy and D. K. Sharma et al., IEEE Trans. Electron Devices, 52, p.2609 (2005)
14. X. N. Yang, E. Weglarz and K. Saluja, IEEE VLSID. p.723 (2007)
15. M. Agostinelli, S. Lau and S. Pae et al., Microelectron. Reliab., 46, p.63 (2006)
16. B.C. Paul, K, Kang and H. Kufluoglu et al., IEEE IEEE Trans. Comput-Aided Design Integr. Circuits Syst. 26, p.743 (2007)
17. B. Cheng, S. Roy and G. Roy et al., Solid State Electron., 49, p.740 (2005)
18. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, p.258 (1998)
19. A. J. Bhavnagarwala, X. H. Tang, and J. D. Meindl, IEEE J. Solid-State Circuits, 36, p.658 (2001)
20. K. Kang, S. P. Park and K. Roy. in IEEE/ACM ICCAD, p.730 (2007)
21. V. Reddy, A. T. Krishnan and A. Marshall et al., Microelectron. Reliab., 45. p.31 (2005)
22. B. Cheng, S. Roy and A. Asenov, Solid State Electron., 51, p.565 (2007)