Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 248-253

  Shi, Zhonghai ^a   Onsongo, David ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Buried channel; Compressively strained; HfO 2; Mobilities; PMOSFETs; Si 1 x Ge x; SiO 2; Surface channel

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ETCHING; ION IMPLANTATION; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDATION; SEMICONDUCTOR DOPING; SILICON WAFERS; STRAIN; SURFACE PROPERTIES;

BURIED-CHANNEL; COMPRESSIVELY STRAINED; HFO2; PMOSFETS; SI1-XGEX; SURFACE-CHANNEL;

SILICON COMPOUNDS;

EID: 1142304527     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.110     Document Type: Conference Paper

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