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Journal of the Electrochemical Society

Volumn 158, Issue 5, 2011, Pages

Frequency and noise performances of photoelectrochemically etched and oxidized gate-recessed AlGaN/GaN MOS-HEMTs

(3) Chiou, Ya Lan a Lee, Chi Sen b Lee, Ching Ting a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ALGAN/GAN; COMBINATION TECHNOLOGY; DIRECT GROWTH; ETCHING METHOD; ETCHING PROCESS; GATE OXIDE LAYERS; LOW-FREQUENCY NOISE; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON MOBILITY TRANSISTORS; NATIVE DEFECT; NOISE PERFORMANCE; ORIGINAL DAMAGE; OXIDATION PROCESS; PHOTOELECTROCHEMICALS; PULSED OUTPUT;

ELECTRON MOBILITY; GALLIUM NITRIDE; MOS DEVICES; OXIDATION; PASSIVATION; SEMICONDUCTOR GROWTH; WET ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79953198614 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3561276 Document Type: Article

Times cited : (11)

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