Sensing mechanisms of Pt/β-Ga2O3/GaN hydrogen sensor diodes

Sensors and Actuators, B: Chemical

Volumn 147, Issue 2, 2010, Pages 723-729

  Lee, Ching Ting ^a   Yan, Jheng Tai ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Activation energy; Enthalpy; Hydrogen sensor diode; Photoelectrochemical oxidation method; Reactive Ga2O3

Indexed keywords

BARRIER HEIGHTS; GAN LAYERS; HYDROGEN ATOMS; HYDROGEN DETECTION; HYDROGEN SENSOR; HYDROGEN SENSOR DIODE; HYDROGEN-SENSING; KINETIC ANALYSIS; KINETIC REACTIONS; MIS HYDROGEN SENSORS; NEGATIVE ENTHALPY; OPERATING TEMPERATURE; OXIDE LAYER; PHOTOELECTROCHEMICAL OXIDATION METHODS; REACTIVE OXIDES; SENSING MECHANISM; SERIES RESISTANCES; STEADY-STATE ANALYSIS; TRAPPING SITES;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; DIODES; ENTHALPY; GALLIUM ALLOYS; GALLIUM NITRIDE; OXIDATION; SENSORS; TEMPERATURE;

HYDROGEN;

EID: 77953137085     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2010.04.008     Document Type: Article

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