Photoelectrochemical function in gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron-mobility transistors

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 183-185

  Chiou, Ya Lan ^a   Huang, Li Hsien ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN; Gate recess; High electron mobility transistors (MOS HEMTs); Metal oxide semiconductor; OFF state breakdown voltage; Photoelectrochemical (PEC) method

Indexed keywords

ALGAN/GAN; BREAKDOWN VOLTAGE; GATE RECESS; METAL OXIDE SEMICONDUCTOR; PHOTOELECTROCHEMICALS;

DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRONS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); OXIDATION; OXIDE FILMS; PASSIVATION; TRANSISTORS; WET ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77649148704     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2037983     Document Type: Article

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