Recovery of Dry-Etch Damage in Gallium-Nitride Schottky Barrier Diodes

Journal of the Electrochemical Society

Volumn 148, Issue 10, 2001, Pages

  Lee, Bok Hyung ^a   Lee, Seong Dae ^a   Kim, Sam Dong ^a   Hwang, In Seok ^a   Park, Hyun Chang ^a   Park, Hyung Moo ^a   Rhee, Jin Koo ^a  

^a Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037643086     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1400746     Document Type: Article

References (12)

1. S. J. Pearton, GaN and Related Materials-Optoelectronic Properties of Semiconductors and Superlattices, Gordon and Breach, New York (1997).
2. W. S. Lee, Y. H. Choi, K. W. Chung, D. C. Moon, and M. W. Shin, Electron. Lett., 36, 265 (2000).
3. E. Alekseev, D. Pavlidis, N. X. Nguyen, C. Nguyen, and D. E. Grider, in Proceedings of the 1999 IEEE MTT-S Int. Microwave Symp. Dig., 2, 533 (1999).
4. S. Yoshida and J. Suzuki, J. Appl. Phys., 85, 7931 (1999).
5. D. Basak, Q. Fareed, K. Nishino, and S. Sakai, J. Vac. Sci. Technol., B, 18, 2491 (2000).
6. M. E. Lin, Z. F. Fan, Z. Ma, L. H. Allen, and H. Morkoff, Appl. Phys. Lett., 64, 887 (1994).
7. R. J. Shul, S. P. Kilcoyne, M. H. Crawford, J. E. Parmeter, C. B. Vartuli, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett., 66, 1761 (1995).
8. I. Adesida, A. Mahajan, E. Andideh, M. A. Khan, D. T. Olson, and J. N. Kuznia, Appl. Phys. Lett., 63, 2777 (1993).
9. X. A. Cao, H. Cho, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, R. Hickman, and J. M. Van Hove, Appl. Phys. Lett., 75, 232 (1999).
10. S. J. Pearton, J. W. Lee, J. D. Mackenzie, C. R. Abernathy, and R. J. Shul, Appl. Phys. Lett., 67, 2329 (1995).
11. R. Rong, R. Cheung, W. Gao, and R. J. Reeves, J. Vac. Sci. Technol., B, 18, 3467 (2000).
12. H. S. Kim, Y. H. Lee, G. Y. Yeom, J. W. Lee, and T. I. Kim, Mater. Sci. Eng., B, 50, 82 (1997).