Etching damage and its recovery in n-GaN by reactive ion etching

Physica B: Condensed Matter

Volumn 334, Issue 1-2, 2003, Pages 188-192

  Chen, Z Z ^a   Qin, Z X ^a   Tong, Y Z ^a   Ding, X M ^a   Hu, X D ^a   Yu, T J ^a   Yang, Z J ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Damage; Dry etching; GaN; Hall measurement; Recovery

Indexed keywords

DRY ETCHING; HALL EFFECT; PHOTOLUMINESCENCE; REACTIVE ION ETCHING;

PLASMA TREATMENT;

GALLIUM NITRIDE;

EID: 0037799126     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(03)00062-0     Document Type: Article

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