Temperature-dependent remote-coulomb-limited electron mobility in n +-polysilicon ultrathin gate oxide nMOSFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1038-1044

  Chen, Ming Jer ^a   Chang, Sou Chi ^b   Kuang, Shin Jiun ^a   Lee, Chien Chih ^a   Lee, Wei Han ^a   Cheng, Kuan Hao ^c   Zhan, Yi Hsien ^a,c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF MICHIGAN   (United States)

^c MINISTRY OF NATIONAL DEFENSE   (Taiwan)

Author keywords

Gate oxide; high k; interface plasmons; metal gate; metaloxidesemiconductor field effect transistors (MOSFETs); mobility; phonons; polysilicon; remote Coulomb; scattering; surface roughness

Indexed keywords

GATE OXIDE; HIGH-K; INTERFACE PLASMONS; METAL GATE; METALOXIDESEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS); MOBILITY; REMOTE COULOMB;

ELECTRON MOBILITY; GATES (TRANSISTOR); LASERS; MOSFET DEVICES; PHONONS; PLASMONS; POLYSILICON; SCATTERING; SILICON COMPOUNDS; SURFACE PROPERTIES; SURFACE ROUGHNESS;

FIELD EFFECT TRANSISTORS;

EID: 79953080092     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2107519     Document Type: Article

References (33)

1. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFETs: Part I-Effects of substrate impurity concentration," IEEE Trans. Electron Devices, vol. 41, no. 12, pp. 2357-2362, Dec. 1994.
2. M. V. Fischetti and S. E. Laux, "Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability," J. Appl. Phys., vol. 89, no. 2, pp. 1205-1231, Jan. 2001. (Pubitemid 33661879)
3. A. Cros, K. Romanjek, D. Fleury, S. Harrison, R. Cerutti, P. Coronel, B. Dumont, A. Pouydebasque, R. Wacquez, B. Duriez, R. Gwoziecki, F. Boeuf, H. Brut, G. Ghibaudo, and T. Skotnicki, "Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling," in IEDM Tech. Dig., 2006, pp. 663-666.
4. V. Barral, T. Poiroux, J. Saint-Martin, D. Munteanu, J.-L. Autran, and S. Deleonibus, "Experimental investigation on the quasi-ballistic transport: Part I-Determination of a new backscattering coefficient extraction methodology," IEEE Trans. Electron Devices, vol. 56, no. 3, pp. 408-419, Mar. 2009.
5. V. Barral, T. Poiroux, D. Munteanu, J.-L. Autran, and S. Deleonibus, "Experimental investigation on the quasi-ballistic transport: Part II- Backscattering coefficient extraction and link with the mobility," IEEE Trans. Electron Devices, vol. 56, no. 3, pp. 420-430, Mar. 2009.
6. Q. Xiang, G. Yeap, D. Bang, M. Song, K. Ahmed, E. Ibok, and M. R. Lin, "Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides," in VLSI Symp. Tech. Dig., Jun. 1998, pp. 160-161.
7. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, "Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides," IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 440-447, Feb. 2000. (Pubitemid 30556168)
8. S. Takagi and M. Takayanagi, "Experimental evidence of inversion-layer mobility lowering in ultrathin gate oxide metal-oxide- semiconductor field-effect-transistors with direct tunneling current," Jpn. J. Appl. Phys., vol. 41, pt. 1, no. 4B, pp. 2348-2352, Apr. 2002. (Pubitemid 43225560)
9. M. S. Krishnan, Y. C. Yeo, Q. Lu, T. J. King, J. Bokor, and C. Hu, "Remote charge scattering in MOSFETs with ultra-thin gate dielectrics," in IEDM Tech. Dig., 1998, pp. 571-574.
10. M. V. Fischetti, "Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures," J. Appl. Phys., vol. 89, no. 2, pp. 1232-1250, Jan. 2001. (Pubitemid 33661880)
11. F. Gámiz and J. B. Roldan, "Scattering of electrons in silicon inversion layers by remote surface roughness," J. Appl. Phys., vol. 94, no. 1, pp. 392-399, Jul. 2003.
12. S. Saito, K. Torii, Y. Shimamoto, S. Tsujikawa, H. Hamamura, O. Tonomura, T. Mine, D. Hisamoto, T. Onai, J. Yugami, M. Hiratani, and S. Kimura, "Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics," Appl. Phys. Lett., vol. 84, no. 8, pp. 1395-1397, Feb. 2004.
13. F. Stern and W. E. Howard, "Properties of semiconductor surface inversion layers in the electric quantum limit," Phys. Rev., vol. 163, no. 3, pp. 816-835, Nov. 1967.
14. A. G. Rojo, "Electron-drag effects in coupled electron systems," J. Phys.: Condens. Matter, vol. 11, no. 5, pp. R31-R52, Feb. 1999. (Pubitemid 129592536)
15. F. Gámiz and M. V. Fischetti, "Remote Coulomb scattering in metal- oxide-semiconductor field effect transistors: Screening by electrons in the gate," Appl. Phys. Lett., vol. 83, no. 23, pp. 4848-4850, Dec. 2003.
16. J. Li and T. P. Ma, "Scattering of silicon inversion layer electrons by metal/oxide interface roughness," J. Appl. Phys., vol. 62, no. 10, pp. 4212- 4215, Nov. 1987.
17. P. M. Solomon and M. Yang, "Relevance of remote scattering in gate to channel mobility of thin-oxide CMOS devices," in IEDM Tech. Dig., 2004, pp. 143-146. (Pubitemid 40928247)
18. F. Lime, C. Guiducci, R. Clerc, G. Ghibaudo, C. Leroux, and T. Ernst, "Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides," Solid State Electron., vol. 47, no. 7, pp. 1147-1153, Jul. 2003.
19. 2-gated NMOSFETs," IEEE Electron Device Lett., vol. 25, no. 2, pp. 89-91, Feb. 2004.
20. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz, "High-κ/metal-gate stack and its MOSFET characteristics," IEEE Electron Device Lett., vol. 25, no. 6, pp. 408-410, Jun. 2004.
21. 2/metal gate MOSFETs: Physical insight into critical parameters," IEEE Trans. Electron Devices, vol. 53, no. 4, pp. 759-768, Apr. 2006.
22. K. H. Cheng, A Fast Quantum Simulator for the Two-Dimensional Inversion Layers, Master Thesis. Hsinchu, Taiwan: Nat. Chiao-Tung Univ., Sep. 2010.
23. Schred. [Online]. Available:
24. S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, "Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 80, no. 3, pp. 1567-1577, Aug. 1996. (Pubitemid 126539021)
25. S. Yamakawa, H. Ueno, K. Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, and U. Ravaioli, "Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method," J. Appl. Phys., vol. 79, no. 2, pp. 911-916, Jan. 1996. (Pubitemid 126571712)
26. D. K. Ferry, Semiconductors. New York: Macmillan, 1991.
27. G. Mazzoni, A. L. Lacaita, L. M. Perron, and A. Pirovano, "On surface roughness-limited mobility in highly doped n-MOSFETs," IEEE Trans. Electron Devices, vol. 46, no. 7, pp. 1423-1428, Jul. 1999.
28. A. Pirovano, A. L. Lacaita, G. Ghidini, and G. Tallarida, "On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs," IEEE Electron Device Lett., vol. 21, no. 1, pp. 34-36, Jan. 2000. (Pubitemid 30552964)
29. D.W. Lin, M. L. Cheng, S.W.Wang, C. C.Wu, and M. J. Chen, "A novel method of MOSFET series resistance extraction featuring constant mobility criteria and mobility universality," IEEE Trans. Electron Devices, vol. 57, no. 4, pp. 890-897, Apr. 2010.
30. J. R. Hauser, "Extraction of experimental mobility data forMOS devices," IEEE Trans. Electron Devices, vol. 43, no. 11, pp. 1981-1988, Nov. 1996.
31. F. Stern, "Calculated temperature dependence of mobility in silicon inversion layers," Phys. Rev. Lett., vol. 44, no. 22, pp. 1469-1472, Jun. 1980.
32. M. V. Fischetti, F. Gámiz, and W. Hänsch, "On the enhanced electron mobility in strained-silicon inversion layers," J. Appl. Phys., vol. 92, no. 12, pp. 7320-7324, Dec. 2002.
33. D. K. Ferry and S. M. Goodnick, Transport in Nanostructures. Cambridge, U.K.: Cambridge Univ. Press, 1997.