A novel method of MOSFET series resistance extraction featuring constant mobility criteria and mobility universality

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 890-897

  Lin, Da Wen ^a,b   Cheng, Ming Lung ^a   Wang, Shyh Wei ^a   Wu, Chung Cheng ^a   Chen, Ming Jer ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

MOSFET; Series resistance; Universal mobility

Indexed keywords

BULK CHARGE; CHANNEL DOPINGS; CHANNEL LENGTH; GATE LENGTH; GATE OXIDE THICKNESS; HEAVILY DOPED; MOBILITY CURVES; MOS-FET; NOVEL METHODS; OR CHANNELS; REASONABLE VALUE; SERIES RESISTANCES; SOURCE/DRAIN EXTENSION; TECHNOLOGY COMPUTER AIDED DESIGN;

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DOPING (ADDITIVES);

MOSFET DEVICES;

EID: 77950298597     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2041508     Document Type: Article

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