Relevance of remote scattering in gate to channel mobility of thin-oxide CMOS devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 143-146

  Solomon, Paul M ^a   Yang, Min ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; COULOMB DRAG; ELECTRON CONFINEMENT; TRANSFER MOBILITY; CMOS DEVICES; DOPING LEVELS; GATE OXIDE THICKNESS; POLY SILICON; REMOTE SCATTERING; SILICON DOPING; SILICON MOSFET; THIN OXIDES;

CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELLIPSOMETRY; INTERFACES (MATERIALS); POLYSILICON; CMOS INTEGRATED CIRCUITS; MOSFET DEVICES;

CMOS INTEGRATED CIRCUITS; DRAG;

EID: 21644474331     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. Paul M. Solomon, 2002, unpublished.
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5. M.M. Mandurah, K.C. Saraswat, and T.I. Kamins, IEEE Trans. Elec.Dev., vol. ED-28, pp. 1171-1176, October 1998.
6. S. Villa, A. L. Lacaita, L. M. Perron, and R. Bez, IEEE Trans. Elec.Dev., vol. 45, pp. 110-115, January 1998.