Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

Solid-State Electronics

Volumn 59, Issue 1, 2011, Pages 50-61

  Afzalian, Aryan ^a,b   Colinge, Jean Pierre ^b   Flandre, Denis ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

NEGF simulations; Quantum effect semiconductor devices; Resonant Tunneling; Silicon nanowire MOSFET; Steep slope

Indexed keywords

DENSITY OF STATE; FUTURE TECHNOLOGIES; MOS TRANSISTORS; MOS-FET; NANOSCALE MOSFETS; NEGF SIMULATIONS; NON-EQUILIBRIUM GREEN'S FUNCTION; OFF-CURRENT; ON-CURRENTS; PHYSICAL MECHANISM; QUANTUM EFFECT SEMICONDUCTOR DEVICES; RESONANT TUNNELING TRANSISTORS; ROADMAP; SILICON NANOWIRE MOSFET; SOURCE-DRAIN; STEEP SLOPE; SUBTHRESHOLD; SUBTHRESHOLD SLOPE; SUPPLY VOLTAGES; TUNNEL BARRIER;

MESFET DEVICES; NANOWIRES; QUANTUM ELECTRONICS; RESONANT TUNNELING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SWITCHES; THREE DIMENSIONAL; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS;

MOSFET DEVICES;

EID: 79953057220     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.01.016     Document Type: Conference Paper

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