Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Luisier, Mathieu ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; BROKEN-GAP HETEROSTRUCTURES; DOUBLE-GATE DEVICE; FULL BAND; GAP STRUCTURES; GRAPHENE NANORIBBONS; INAS; LOW BAND GAP; NANORIBBONS; ON-CURRENTS; PERFORMANCE COMPARISON; QUANTUM TRANSPORT; SUBTHRESHOLD SLOPE; SUPPLY VOLTAGES; TRANSISTOR TYPES; TUNNELING FIELD-EFFECT TRANSISTORS;

CARBON NANOTUBES; CRYSTALS; ELECTRON DEVICES; GALLIUM ALLOYS; INDIUM ANTIMONIDES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 77952363080     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424280     Document Type: Conference Paper

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