Breaching the kT/q limit with dopant segregated Schottky barrier resonant tunneling MOSFETs: A computationnal study

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 376-379

  Afzalian, Aryan ^a   Flandre, Denis ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER STRUCTURES; DOPANT SEGREGATION; MOS-FET; MOSFETS; NANOSCALE TRANSISTORS; NEW MATERIAL; NON-EQUILIBRIUM GREEN'S FUNCTION; ON-CURRENTS; QUANTUM SIMULATIONS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SERIES RESISTANCES; STEEP SLOPE; SUBTHRESHOLD SLOPE; ULTRA-HIGH;

GREEN'S FUNCTION; MOSFET DEVICES; QUANTUM CHEMISTRY; RESONANT TUNNELING; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SOLID STATE DEVICES;

IMPACT RESISTANCE;

EID: 78649924920     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618206     Document Type: Conference Paper

References (9)

1. ITRS Int. Tech. Roadmap for Semiconductors, http://public.itrs.net/.
2. Q. T. Zhao, et al., Appl. Phys. Lett., 86, 062108 -2005.
3. G. Larrieu and E. Dubois, IEEE Trans. Elec. Dev., 52, p. 2720, 2005.
4. S. F. Feste, et al., JAP 107, 044510, 2010.
5. J. Guo and M. S. Lundstrom, IEEE TED, 49, 11, p.1897, 2002.
6. A. Afzalian, J.-P. Colinge, and D. Flandre, EUROSOI Conf., 2010.
7. A. Afzalian, J.-P. Colinge, and D. Flandre, Sol.State E., to be published.
8. A. Afzalian et al., J. of Comp. Electron., 8, 3-4, Oct. 2009, pp. 287-306.
9. S.-D. Kim, C.-M. Park, J. Woo, IEEE TED, 49, 11, p. 457, 2002.