Quantum confinement effects in capacitance behavior of multigate silicon nanowire MOSFETs

IEEE Transactions on Nanotechnology

Volumn 10, Issue 2, 2011, Pages 300-309

  Afzalian, Aryan ^a   Lee, Chi Woo ^a   Dehdashti Akhavan, Nima ^a   Yan, Ran ^a   Ferain, Isabelle ^a   Colinge, Jean Pierre ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Capacitance; MOS devices; quantum effect semiconductor devices; quantum wires; semiconductor device modeling; silicon on insulator technology

Indexed keywords

CAPACITANCE RATIO; CHARGE CENTROID; CONFINED STRUCTURES; DENSITY OF STATE; GATE CAPACITANCE; GATE OXIDE THICKNESS; GATE VOLTAGES; NON EQUILIBRIUM; QUANTUM CONFINEMENT EFFECTS; QUANTUM EFFECT SEMICONDUCTOR DEVICES; QUANTUM WIRES; SEMICONDUCTOR DEVICE MODELING; SILICON NANOWIRE FETS; SILICON NANOWIRE MOSFETS; SUB-BANDS; TOTAL VARIATION;

CAPACITANCE; EQUIPMENT; MOS DEVICES; NANOWIRES; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES; SILICON ON INSULATOR TECHNOLOGY; WIRE;

SEMICONDUCTING SILICON;

EID: 77955663558     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2039800     Document Type: Article

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